STB21NM50N

MOSFET 500V 0.15Ohm 18A N-CHANNEL

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STB21NM50N Picture
SeekIC No. : 00161727 Detail

STB21NM50N: MOSFET 500V 0.15Ohm 18A N-CHANNEL

floor Price/Ceiling Price

Part Number:
STB21NM50N
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : 18 A
Resistance Drain-Source RDS (on) : 0.19 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : D2PAK
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 18 A
Drain-Source Breakdown Voltage : 500 V
Resistance Drain-Source RDS (on) : 0.19 Ohms
Gate-Source Breakdown Voltage : +/- 25 V


Features:

· 100% AVALANCHE TESTED
· LOW INPUT CAPACITANCE AND GATE CHARGE
· LOW GATE INPUT RESISTANCE



Application

The MDmesh™ II family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.




Specifications

Symbol Parameter
Value
Unit
TO-220 / D2PAK / I2PAK / TO-247 TO-220FP
VDS Drain-source Voltage (VGS = 0)
500
V
VDGR Drain-gate Voltage (RGS = 20 k)
500
V
VGS Gate- source Voltage
±25
V
ID Drain Current (continuos) at TC = 25
18
18(*)
A
ID Drain Current (continuos) at TC = 100
11
11(*)
A
IDM(`) Drain Current (pulsed)
72
72(*)
A
PTOT Total Dissipation at TC = 25
140
30
W
Derating Factor
1.12
0.23
W/
dv/dt (1) Peak Diode Recovery voltage slope
15
V/ns
VISO Insulation Winthstand Voltage (DC)
-
2500
V
Tstg Storage Temperature
55 to 150
150
Tj Max. Operating Junction Temperature
(`) Pulse width limited by safe operating area
(*) Limited only by maximum temperature allowed
(1) ISD 18 A, di/dt 400 A/s, VDD =80% V(BR)DSS



Description

The STx21NM50N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.




Parameters:

Technical/Catalog InformationSTB21NM50N
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C18A
Rds On (Max) @ Id, Vgs190 mOhm @ 9A, 10V
Input Capacitance (Ciss) @ Vds 1950pF @ 25V
Power - Max140W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs65nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STB21NM50N
STB21NM50N
497 5783 2 ND
49757832ND
497-5783-2



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