Features: ` TYPICAL RDS(on) = 0.034 ` EXCEPTIONAL dv/dt CAPABILITY` 100% AVALANCHE TESTED` LOW GATE CHARGE AT 100 ` APPLICATIONORIENTED CHARACTERIZATION` ADD SUFFIX T4 FORORDERING IN TAPE & REELApplication· HIGH CURRENT, HIGH SPEED SWITCHING· SOLENOID AND RELAY DRIVERS· MOTOR CONTROL, AUDIO ...
STB22NE03L: Features: ` TYPICAL RDS(on) = 0.034 ` EXCEPTIONAL dv/dt CAPABILITY` 100% AVALANCHE TESTED` LOW GATE CHARGE AT 100 ` APPLICATIONORIENTED CHARACTERIZATION` ADD SUFFIX T4 FORORDERING IN TAPE & RE...
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| Symbol | Parameter |
Value |
Unit |
| VDS | Drain-source Voltage (VGS = 0) |
30 |
V |
| VDGR | Drain-gate Voltage (RGS = 20 k) |
30 |
V |
| VGS | Gate- source Voltage |
±15 |
V |
| ID | Drain Current (continuos) at TC = 25 |
22 |
A |
| ID | Drain Current (continuos) at TC = 100 |
16 |
A |
| IDM() | Drain Current (pulsed) |
88 |
A |
| Ptot | Total Dissipation at TC = 25 |
60 |
W |
| Derating Factor |
0.4 |
W/ | |
| dv/dt (1) | Peak Diode Recovery voltage slope |
6 |
V/ns |
| Tstg | Storage Temperature |
65 to 175 |
|
| Tj | Max. Operating Junction Temperature |
175 |
This STB22NE03L Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.