STB25NM60N-1

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 20 A
Drain-Source Breakdown Voltage : 600 V
Package / Case : I2PAK
Gate-Source Breakdown Voltage : +/- 25 V
Resistance Drain-Source RDS (on) : 0.17 Ohms


Features:

` WORLD'S LOWEST ON RESISTANCE
` TYPICAL R_DS(on) = 0.140
` HIGH dv/dt AND AVALANCHE CAPABILITIES
` 100% AVALANCHE TESTED
` LOW INPUT CAPACITANCE AND GATE CHARGE
` LOW GATE INPUT RESISTANCE


Application

The MDmesh™ II family is very suitable for increase the power density of high voltage converters allowing system miniaturization and higher efficiencies .

Specifications

Symbol	Parameter	Value		Unit
		TO-220/I²PAK TO-247/D²PAK	TO-220FP
VDS	Drain-source Voltage (VGS = 0)	600		V
VDGR	Drain-gate Voltage (RGS = 20 k)	600		V
VGS	Gate- source Voltage	±25		V
ID	Drain Current (continuos) at TC = 25	20	20(*)	A
ID	Drain Current (continuos) at TC = 100	12.8	12.8(*)	A
IDM(1)	Drain Current (pulsed)	80	80(*)	A
PTOT	Total Dissipation at TC = 25	160	40	W
	Derating Factor	1.28	0.32	W/
dv/dt (2)	Peak Diode Recovery voltage slope	TBD		V/ns
Tstg	Storage Temperature	55 to 150
Tj	Max. Operating Junction Temperature	150

(*) Limited only by maximum temperature allowed
(1) Pulse width limited by safe operating area
(2) I_SD 20 A, di/dt 400 A/s, V_DD =80%V_(BR)DSS.


Description

The STP25NM60N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET associates a new vertical structure to the Company's strip layout to yield the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters

Parameters:

Technical/Catalog Information	STB25NM60N-1
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	21A
Rds On (Max) @ Id, Vgs	160 mOhm @ 10.5A, 10V
Input Capacitance (Ciss) @ Vds	2400pF @ 50V
Power - Max	160W
Packaging	Tube
Gate Charge (Qg) @ Vgs	84nC @ 10V
Package / Case	I²Pak, TO-262 (3 straight leads + tab)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STB25NM60N 1 STB25NM60N1 497 5730 ND 4975730ND 497-5730