STB55NF06L-1 Selling Leads, Price trend, STB55NF06L-1 DataSheet download, circuit diagram from SeekIC.com

ApplicationHIGH CURRENT, HIGH SPEED SWITCHINGMOTOR CONTROL, AUDIO AMPLIFIERS DC-DC & DC-AC CONVERTERS AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)Specifications Symbol Parameter Value Unit STP55NF06LSTB55NF06L/-1 STP55NF06LFP VDS D...

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STB55NF06L-1: ApplicationHIGH CURRENT, HIGH SPEED SWITCHINGMOTOR CONTROL, AUDIO AMPLIFIERS DC-DC & DC-AC CONVERTERS AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)Specifications Sym...

STB55NF06L-1 Data Sheet

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Part Number:: STB55NF06L-1
Supply Ability:: 5000

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Upload time: 2024/4/28

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Recent History
What is this?

STB50N25M5 evaluate
US $1.43 - 1.88 / Piece

MOSFET N-Channel 150V to 400V
STB50NE08 evaluate
Features: TYPICAL RDS(on) = 0.020 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHA...
STB50NE10 evaluate
Features: TYPICAL RDS(on) = 0.021 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CH...

Product Details

Description

Application

HIGH CURRENT, HIGH SPEED SWITCHING
MOTOR CONTROL, AUDIO AMPLIFIERS
DC-DC & DC-AC CONVERTERS
AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)

Specifications

Symbol	Parameter	Value		Unit
		STP55NF06L STB55NF06L/-1	STP55NF06LFP
V_DS	Drain-source Voltage (V_GS = 0)	60
V_DGR	Drain-gate Voltage (R_GS = 20 k)	60		V
V_GS	Gate- source Voltage	± 16		V
I_D	Drain Current (continuous) at T_C = 25°C	55	30	V
I_D	Drain Current (continuous) at T_C = 100°C	39	21	A
I_DM ()	Drain Current (pulsed)	220	120	A
P_TOT	Total Dissipation at T_C = 25°C	95	30	A
	Derating Factor	0.63	0.2	W
dv/dt (2)	Peak Diode Recovery voltage slope	20		W/°C
E_AS (1)	Single Pulse Avalanche Energy	300		V/ns
V_ISO	Insulation Withstand Voltage (DC)		2500	mJ
T_stg	Storage Temperature	55 to 175		V
T_j	Max. Operating Junction Temperature	55 to 175		°C

Description

This Power Mosfet STB55NF06L-1 is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

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STB55NF06L-1

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