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STB5NB60

ApplicationHIGH CURRENT, HIGH SPEED SWITCHINGSWITCH MODE POWER SUPPLIES(SMPS)DC-AC CONVERTERS FOR WELDINGEQUIPMENTAND UNINTERRUPTIBLEPOWERSUPPLIES AND MOTOR DRIVESpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS =0) 600 V VDGR Drain- gate Voltage (RGS =20...

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SeekIC No. : 004507192 Detail

STB5NB60: ApplicationHIGH CURRENT, HIGH SPEED SWITCHINGSWITCH MODE POWER SUPPLIES(SMPS)DC-AC CONVERTERS FOR WELDINGEQUIPMENTAND UNINTERRUPTIBLEPOWERSUPPLIES AND MOTOR DRIVESpecifications Symbol Paramete...

STB5NB60 Data Sheet

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Part Number:
STB5NB60
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2026/1/16

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Product Details

Description



Application

HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES(SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIES AND MOTOR DRIVE


Specifications

Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS =0) 600 V
VDGR Drain- gate Voltage (RGS =20kΩ) 600 V
VGS Gate-source Voltage ± 30 V
ID Drain Current (continuous) at Tc =25 5 A
ID Drain Current (continuous) at Tc =100 3.1 A
IDM(•) Drain Current (pulsed) 20 A
Ptot Total Dissipation at Tc =25 100 W
  Derating Factor 0.8 W/
dv/dt(1) Peak Diode Recovery voltage slope 4.5 V/ns
Tstg Storage Temperature -65 to 150
Tj Max. Operating Junction Temperature 150



Description

Using the latest high voltage MESH OVERLAY process, STB5NB60 STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

 


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