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STB5NB80

Features: TYPE VDSS RDS(on) ID STB5NB80 800 V < 2.2 5 A` TYPICAL RDS(on) = 1.8 ` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` VERY LOW INTRINSIC CAPACITANCES` GATE CHARGE MINIMIZED` ADD SUFFIX T4 FORORDERING IN TAPE & REELApplication· HIGH CURRENT,...

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SeekIC No. : 004507193 Detail

STB5NB80: Features: TYPE VDSS RDS(on) ID STB5NB80 800 V < 2.2 5 A` TYPICAL RDS(on) = 1.8 ` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` VERY LOW INTRINSIC CAPACITAN...

STB5NB80 Data Sheet

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Part Number:
STB5NB80
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Features:

TYPE
VDSS
RDS(on)
ID
STB5NB80
800 V
< 2.2
5 A

` TYPICAL RDS(on) = 1.8
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` VERY LOW INTRINSIC CAPACITANCES
` GATE CHARGE MINIMIZED
` ADD SUFFIX "T4" FORORDERING IN TAPE & REEL


Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· DC-AC CONVERTERS FOR WELDING
· EQUIPMENT AND UNINTERRUPTIBLE POWERSUPPLIES AND MOTOR DRIVE


Specifications

Symbol
Parameter
Value
Units
VDSS
 Drain-Source Voltage
800
V
VDGR
 Drain- gate Voltage (RGS = 20 k)
800
V
VGS
 Gate-source Voltage
±30
V
ID
 Drain Current (continuous) at Tc = 25
5
A
ID
 Drain Current (continuous) at Tc = 100
3.2
A
IDM(•)
 Drain Current (pulsed)
20
A
Ptot
 Total Dissipation at Tc = 25
110
W
 Derat ing Factor
0.88
W/
dv/dt (1)
 Peak Diode Recovery voltage slope
4
V/ns
Ts tg
 Storage Temperature
-65 to +150
Tj
 Max. Operating Junction Temperature
150

(*) Limited only by maximum temperature allowed

( 1) ISD 5A, di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX



Description

Using the latest high voltage MESH OVERLAY] process, STB5NB80 STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.




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