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STB60NE06L-16

Features: *TYPICAL RDS(on) = 0.014 W* AVALANCHERUGGED TECHNOLOGY* LOW GATE CHARGE* HIGH CURRENT CAPABILITY* 175 OPERATINGTEMPERATURE* LOW THRESHOLD DRIVE* FOR THROUGH-HOLE VERSION CONTACT SALES OFFICEApplication*HIGH CURRENT, HIGH SPEED SWITCHING* SOLENOID AND RELAY DRIVERS* DC-DC & DC-AC CONV...

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STB60NE06L-16: Features: *TYPICAL RDS(on) = 0.014 W* AVALANCHERUGGED TECHNOLOGY* LOW GATE CHARGE* HIGH CURRENT CAPABILITY* 175 OPERATINGTEMPERATURE* LOW THRESHOLD DRIVE* FOR THROUGH-HOLE VERSION CONTACT SALES OFFI...

STB60NE06L-16 Data Sheet

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Part Number:
STB60NE06L-16
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Features:

* TYPICAL RDS(on) = 0.014 W
* AVALANCHERUGGED TECHNOLOGY
* LOW GATE CHARGE
* HIGH CURRENT CAPABILITY
* 175  OPERATINGTEMPERATURE
* LOW THRESHOLD DRIVE
* FOR THROUGH-HOLE VERSION CONTACT
   SALES OFFICE


Application

* HIGH CURRENT, HIGH SPEED SWITCHING
* SOLENOID AND RELAY DRIVERS
* DC-DC & DC-AC CONVERTERS
* AUTOMOTIVE ENVIRONMENT


Specifications

Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 60 V
VDGR Drain- gate Voltage (RGS = 20 kW) 60 V
VGS Gate-source Voltage ± 20 V
ID Drain Current (continuous) at Tc = 25 60 A
ID Drain Current (continuous) at Tc = 100 42 A
IDM(•) Drain Current (pulsed) 240 A
Ptot Total Dissipation at Tc = 25 150 W
  Derating Factor 1 W/
dv/dt Peak Diode Recovery voltage slope 6 V/ns
Tstg Storage Temperature -65 to 175
Tj Max. Operating Junction Temperature 175



Description

This Power Mosfet STB60NE06L-16 is the latest development of STMicroelectronis unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




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