ApplicationHIGH-EFFICIENCY DC-DC CONVERTERSAUTOMOTIVESpecifications Symbol Parameter Value Unit STB60NF06LSTP60NF06L STP60NF06LFP VDS Drain-source Voltage (VGS = 0) 60 V VDGR Drain-gate Voltage (RGS = 20 k) 60 V VGS Gate- source Voltage ± 15...
STB60NF06L: ApplicationHIGH-EFFICIENCY DC-DC CONVERTERSAUTOMOTIVESpecifications Symbol Parameter Value Unit STB60NF06LSTP60NF06L STP60NF06LFP VDS Drain-source Voltage (VGS = 0) ...
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Features: `TYPICAL RDS(on) = 0.0085 `AVALANCHE RUGGED TECHNOLOGY`100% AVALANCHE TESTED`REPETITIVE ...
|
Symbol |
Parameter |
Value |
Unit | |
|
STB60NF06L STP60NF06L |
STP60NF06LFP | |||
| VDS |
Drain-source Voltage (VGS = 0) |
60 |
V | |
| VDGR |
Drain-gate Voltage (RGS = 20 k) |
60 |
V | |
| VGS |
Gate- source Voltage |
± 15 |
V | |
| ID |
Drain Current (continuous) at TC = 25°C |
60 |
60(*) |
A |
| ID |
Drain Current (continuous) at TC = 100°C |
42 |
42(*) |
A |
| IDM(`) |
Drain Current (pulsed) |
240 |
240(*) |
A |
| Ptot |
Total Dissipation at TC = 25°C |
110 |
30 |
W |
|
Derating Factor |
0.73 |
0.2 |
W/°C | |
| dv/dt (1) |
Peak Diode Recovery voltage slope |
20 |
V/ns | |
| EAS (2) |
Single Pulse Avalanche Energy |
320 |
mJ | |
| VISO |
Insulation Withstand Voltage (DC) |
------ |
2000 |
V |
| Tstg |
Storage Temperature |
-55 to 175 |
°C | |
| Tj |
Operating Junction Temperature | |||
This STB60NF06L MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.