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STB60NF10-1

MOSFET N Ch 100V 0.019Ohm 80A

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SeekIC No. : 00161686 Detail

STB60NF10-1: MOSFET N Ch 100V 0.019Ohm 80A

STB60NF10-1 Data Sheet

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Part Number:
STB60NF10-1
Mfg:
STMicroelectronics
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 0.023 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : I2PAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 100 V
Packaging : Tube
Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 0.023 Ohms
Package / Case : I2PAK


Parameters:

Technical/Catalog InformationSTB60NF10-1
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs23 mOhm @ 40A, 10V
Input Capacitance (Ciss) @ Vds 4270pF @ 25V
Power - Max300W
PackagingTube
Gate Charge (Qg) @ Vgs104nC @ 10V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STB60NF10 1
STB60NF101
497 6185 5 ND
49761855ND
497-6185-5



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