STB75NF75L-1

Features:

·TYPICAL RDS(on) = 0.009W
·EXCEPTIONAL dv/dt CAPABILITY
·100% AVALANCHE TESTED
·LOW THRESHOLD DRIVE


Application

·SOLENOID AND RELAY DRIVERS
·DC MOTOR CONTROL
·DC-DC CONVERTERS
·AUTOMOTIVE ENVIRONMENT


Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	75	V
VDGR	Drain-gate Voltage (RGS = 20 k)	75	V
VGS	Gate- source Voltage	± 15	V
ID(`)	Drain Current (continuos) at TC = 25	75	A
ID	Drain Current (continuos) at TC = 100	75	A
IDM(``)	Drain Current (pulsed)	300	A
Ptot	Total Dissipation at TC = 25	300	W
	Derating Factor	2	W/
dv/dt (1)	Peak Diode Recovery voltage slope	20	V/ns
EAS (2)	Single Pulse Avalanche Energy	680	mJ
Tstg	Storage Temperature	-55 to 175
Tj	Max. Operating Junction Temperature

Description

This STB75NF75L-1 MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.