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STB7NB60

Features: · TYPICAL RDS(on) = 1.0 W· EXTREMELY HIGH dv/dt CAPABILITY· 100% AVALANCHE TESTED· VERYLOW INTRINSIC CAPACITANCES· GATECHARGE MINIMIZEDApplication· HIGH CURRENT, HIGH SPEED SWITCHING· SWITCH MODE POWER SUPPLIES (SMPS)· DC-AC CONVERTERS FOR WELDING EQUIPMENTAND UNINTERRUPTIBLE POWER SUPPL...

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SeekIC No. : 004507248 Detail

STB7NB60: Features: · TYPICAL RDS(on) = 1.0 W· EXTREMELY HIGH dv/dt CAPABILITY· 100% AVALANCHE TESTED· VERYLOW INTRINSIC CAPACITANCES· GATECHARGE MINIMIZEDApplication· HIGH CURRENT, HIGH SPEED SWITCHING· SWIT...

STB7NB60 Data Sheet

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Part Number:
STB7NB60
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2026/1/16

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Product Details

Description



Features:

·  TYPICAL RDS(on) = 1.0 W
·  EXTREMELY HIGH dv/dt CAPABILITY
·  100% AVALANCHE TESTED
·  VERYLOW INTRINSIC CAPACITANCES
·  GATECHARGE MINIMIZED




Application

·  HIGH CURRENT, HIGH SPEED SWITCHING
·  SWITCH MODE POWER SUPPLIES (SMPS)
·  DC-AC CONVERTERS FOR WELDING EQUIPMENTAND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE




Specifications

Symbol
Parameter
Value
Uni t
VDS
 Drain-source Voltage (VGS = 0)
600
V
VDGR
 Drain- gate Voltage (RGS = 20 kW)
600
V
VGS
 Gate-source Voltage
± 30
V
ID
 Drain Current (continuous) at Tc = 25
7.2
A
ID
 Drain Current (continuous) at Tc = 100
4.5
A
IDM(•)
 Drain Current (pulsed)
28.8
A
Ptot
 Total Dissipation at Tc = 25
125
W
 Derating Factor
1.0
W/
dv/dt(1)
 Peak Diode Recovery voltage slope
4.5
V/ns
Tstg
 Storage Temperature
-65 to 150
Tj
 Max. Operating Junction Temperature
150

(•) Pulse width limited by safe operating area (1) ISD 7A, di/dt 200 A/ms, VDD  V(BR)DSS, Tj TJMAX




Description

Using the latest high voltage MESH OVERLAYTM process, STB7NB60 SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.




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