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STB80NF55-06

Application·SOLENOID AND RELAY DRIVERS·MOTOR CONTROL, AUDIO AMPLIFIERS·DC-DC CONVERTERS·AUTOMOTIVE ENVIRONMENTSpecifications Symbol Parameter Max. Units VDS Drain-source Voltage (VGS = 0) 55 V VDGR Drain-gate Voltage (RGS = 20 kW) 55 V VGS Gate- source Volta...

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STB80NF55-06: Application·SOLENOID AND RELAY DRIVERS·MOTOR CONTROL, AUDIO AMPLIFIERS·DC-DC CONVERTERS·AUTOMOTIVE ENVIRONMENTSpecifications Symbol Parameter Max. Units VDS Drain-source Voltage ...

STB80NF55-06 Data Sheet

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Part Number:
STB80NF55-06
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Application

·SOLENOID AND RELAY DRIVERS
·MOTOR CONTROL, AUDIO AMPLIFIERS
·DC-DC CONVERTERS
·AUTOMOTIVE ENVIRONMENT


Specifications

Symbol
Parameter
Max.
Units
VDS Drain-source Voltage (VGS = 0)
55
V
VDGR Drain-gate Voltage (RGS = 20 kW)
55
V
VGS Gate- source Voltage
± 20
v
ID Drain Current (continuous) at TC = 25°C
80
A
ID Drain Current (continuous) at TC = 100°C
57
A
IDM(·) Drain Current (pulsed)
320
A
Ptot Total Dissipation at TC = 25°C
210
W
  Derating Factor
1.43
W/°C
VISO Insulation Withstand Voltage (DC)
7
V/ns
Tstg Storage Temperature
-65 to 175
°C
Tj Max. Operating Junction Temperature
175
°C



Description

This STB80NF55-06 Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable anufacturing reproducibility.




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