Position: Home  > All Categories> Integrated Circuits (ICs) > STB80NF55-08

STB80NF55-08

Application·SOLENOID AND RELAY DRIVERS·MOTOR CONTROL, AUDIO AMPLIFIERS·DC-DC CONVERTERS·AUTOMOTIVE ENVIRONMENTSpecifications Symbol Parameter Max. Units VDS Drain-source Voltage (VGS = 0) 55 V VDGR Drain-gate Voltage (RGS = 20 kW) 55 V VGS Gate- source Volta...

product image

STB80NF55-08 Picture
See larger image
SeekIC No. : 004507260 Detail

STB80NF55-08: Application·SOLENOID AND RELAY DRIVERS·MOTOR CONTROL, AUDIO AMPLIFIERS·DC-DC CONVERTERS·AUTOMOTIVE ENVIRONMENTSpecifications Symbol Parameter Max. Units VDS Drain-source Voltage ...

STB80NF55-08 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
STB80NF55-08
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/23

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Application

·SOLENOID AND RELAY DRIVERS
·MOTOR CONTROL, AUDIO AMPLIFIERS
·DC-DC CONVERTERS
·AUTOMOTIVE ENVIRONMENT


Specifications

Symbol
Parameter
Max.
Units
VDS Drain-source Voltage (VGS = 0)
55
V
VDGR Drain-gate Voltage (RGS = 20 kW)
55
V
VGS Gate- source Voltage
± 20
v
ID Drain Current (continuous) at TC = 25°C
80
A
ID Drain Current (continuous) at TC = 100°C
57
A
IDM(·) Drain Current (pulsed)
320
A
Ptot Total Dissipation at TC = 25°C
300
W
  Derating Factor
2
W/°C
EAS (1) Single Pulse Avalanche Energy
870
mJ
Tstg Storage Temperature
-55 to + 75
°C
Tj Max. Operating Junction Temperature
-55 to + 75
°C



Description

This STB80NF55-08 Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Resistors
A101G
3006P-1-205LF
Static Control, ESD, Clean Room Products
DPA5
PA800-A41
Boxes, Enclosures, Racks
ACLSN12
ACLJIC
Transformers
TM-09210
BV222-1-00992
Audio Products
HUC1002
WM-64CT
Fans, Thermal Management
3610ML-05W-B49
1608KL-05W-B39
View more