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STB9NB50

MOSFET N-Ch 500 Volt 9 Amp

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SeekIC No. : 00166761 Detail

STB9NB50: MOSFET N-Ch 500 Volt 9 Amp

STB9NB50 Data Sheet

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Part Number:
STB9NB50
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/19

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 8.6 A
Resistance Drain-Source RDS (on) : 0.85 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Package / Case : D2PAK
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 0.85 Ohms
Continuous Drain Current : 8.6 A


Features:

TYPE
VDSS
RDS(on)
ID
STB9NB50
500 V
< 0.85
8.6 A

` TYPICAL RDS(on) = 0.75
` EXTREMELY HIGH dv/dt CAPABILITY
` AVALANCHERUGGED TECHNOLOGY
` 100% AVALANCHE TESTED
` REPETITIVE AVALANCHE DATA AT 100oC
` VERYLOW INTRINSIC CAPACITANCE
` GATECHARGE MINIMIZED
` LOW LEAKAGECURRENT
` APPLICATION ORIENTED CHARACTERIZATION
` FOR SMD D2PAK VERSION CONTACT SALES OFFICE


Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· SWITCH MODE POWER SUPPLY (SMPS)
· DC-AC CONVERTER FOR WELDING EQUIPMENTAND UNINTERRUPTABLE POWER SUPPLY (UPS)


Specifications

Symbol
Parameter
FQP2NA90
Units
VDS
 Drain-source Voltage (VGS = 0)
500
V
VDGR
 Drain- gate Voltage (RGS = 20 k)
500
V
VGS
 Gate-source Voltage
±30
V
ID
 Drain Current (continuous) at Tc = 25
8.6
A
ID
 Drain Current (continuous) at Tc = 100
5.4
A
IDM(•)
 Drain Current (pulsed)
34.4
A
Ptot
 Total Dissipation at Tc = 25
125
W
 Derating Factor
1.0
W/
dv/dt (1)
 Peak Diode Recovery voltage slope
4.5
V/ns
Tstg
 Storage Temperature
-65 to +150
Tj
 Max. Operating Junction Temperature
300

(•) Pulse width limited by safe operating area
(1) ISD 9A, di/dt 200 A/s, VDD V(BR)DSS, TjTJMAX


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