STBV42

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Package / Case : TO-92
Collector- Emitter Voltage VCEO Max : 400 V
Maximum DC Collector Current : 1 A
Packaging : Bulk
DC Collector/Base Gain hfe Min : 10
Emitter- Base Voltage VEBO : 9 V


Features:

·  MEDIUM VOLTAGE CAPABILITY
·  LOW SPREAD OF DYNAMIC PARAMETERS
·  MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
·  VERY HIGH SWITCHING SPEED

Application

·  ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING

Specifications

Symbol	Parameter	Value	Uni t
VCES	Collector-Emit ter Voltage (VBE = 0)	700	V
VCEO	Collector-Emit ter Voltage (IB = 0)	400	V
VEBO	Emitter-Base Voltage (IC = 0)	9	V
IC	Collector Current	1	A
ICM	Collector Peak Current (tp < 5 ms)	2	A
IB	Base Current	0.5	A
IBM	Base Peak Current (tp < 5 ms)	1	A
Ptot	Total Dissipation at Tc = 25	1	W
Tstg	Storage Temperature	-65 to 150
Tj	Max. Operating Junction Temperature	150

Description

The device STBV42 is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.

STBV42 uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

The STBV42 is designed for use in compact fluorescent lamp application.

Parameters:

Technical/Catalog Information	STBV42
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	400V
Current - Collector (Ic) (Max)	1A
Power - Max	1W
DC Current Gain (hFE) (Min) @ Ic, Vce	12 @ 500A, 2V
Vce Saturation (Max) @ Ib, Ic	1V @ 125mA, 500mA
Frequency - Transition	-
Current - Collector Cutoff (Max)	1mA
Mounting Type	Through Hole
Package / Case	TO-92-3 (Straight Leads)
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STBV42 STBV42