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STD12NF06L-1

MOSFET N-Ch 60 Volt 12 Amp

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SeekIC No. : 00155723 Detail

STD12NF06L-1: MOSFET N-Ch 60 Volt 12 Amp

STD12NF06L-1 Data Sheet

floor Price/Ceiling Price

US $ .3~.33 / Piece | Get Latest Price
Part Number:
STD12NF06L-1
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~2180
  • 2180~5000
  • 5000~10000
  • Unit Price
  • $.33
  • $.32
  • $.3
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 16 V Continuous Drain Current : 12 A
Resistance Drain-Source RDS (on) : 0.1 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : IPAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 12 A
Drain-Source Breakdown Voltage : 60 V
Package / Case : IPAK
Gate-Source Breakdown Voltage : +/- 16 V
Resistance Drain-Source RDS (on) : 0.1 Ohms


Features:

Exceptional dv/dt capability
Low gate charge


Application

Switching application


Specifications

Symbol
Parameter
Value
Unit
VDS
VDGR
VGS
ID
ID
IDM(1)
PTOT

dv/dt (2)
EAS(3)
Tstg
TJ		 Drain-source voltage (VGS = 0)
Drain-gate voltage (RGS = 20KΩ)
Gate-source voltage
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC=100°C
Drain current (pulsed)
Total dissipation at TC = 25°C
Derating factor
Peak diode recovery voltage slope
Single pulse avalanche energy
Storage temperature
Max. operating junction temperature
60
60
± 16
12
8.5
48
30
0.2
15
100
-55 to 175
V
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
1. Pulse width limited by safe operating area
2. ISD 12A, di/dt 200A/µs, VDS 40V, TJ TJMAX
3. Starting TJ = 25 oC, ID = 6A, VDD = 30V


Description

This Power MOSFET STD12NF06L-1 is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




Parameters:

Technical/Catalog InformationSTD12NF06L-1
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C12A
Rds On (Max) @ Id, Vgs100 mOhm @ 6A, 10V
Input Capacitance (Ciss) @ Vds 350pF @ 25V
Power - Max30W
PackagingTube
Gate Charge (Qg) @ Vgs10nC @ 5V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STD12NF06L 1
STD12NF06L1
497 6730 5 ND
49767305ND
497-6730-5



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