ApplicationHIGH-EFFICIENCYDC-DC CONVERTERSUPS AND MOTOR CONTROLSpecifications Symbol Parameter Value Unit VCES Drain-source Voltage (VGS = 0) 100 V VDGR Drain- gate Voltage (RGS = 20 kW) 100 V VGE Gate-Emitter Voltage ±20 V ID Drain Cu...
STD15NF10: ApplicationHIGH-EFFICIENCYDC-DC CONVERTERSUPS AND MOTOR CONTROLSpecifications Symbol Parameter Value Unit VCES Drain-source Voltage (VGS = 0) 100 V VDGR Drain- gat...
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|
Symbol |
Parameter |
Value |
Unit | |
|
VCES |
Drain-source Voltage (VGS = 0) |
100 |
V | |
|
VDGR |
Drain- gate Voltage (RGS = 20 kW) |
100 |
V | |
|
VGE |
Gate-Emitter Voltage |
±20 |
V | |
|
ID |
Drain Current (continuous) at TC = 25°C (Steady State) |
15 |
A | |
|
ID |
Drain Current (continuous) at TC = 100°C |
10 |
A | |
|
IDM (*) |
Drain Current (pulsed) |
60 |
A | |
|
PTOT |
Total Dissipation at TC = 25°C (Steady State) |
45 |
W | |
|
|
Derating Factor |
0.3 |
W/°C | |
|
dv/dt (1) |
Peak Diode Recovery voltage slope |
9 |
V/ns | |
|
EAS(2) |
Single Pulse Avalanche Energy |
75 |
mJ | |
|
Tstg |
Storage Temperature |
-65 to 175 |
°C | |
|
Tj |
Max.Operating Junction Temperature |
- 65 to 150 |
°C | |
This STD15NF10 MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.