Features: ` TYPICAL RDS(on) = 0.07 ` EXCEPTIONAL dv/dt CAPABILITY ` 100% AVALANCHE TESTED ` LOW GATE CHARGE 100 oC ` APPLICATION ORIENTED CHARACTERIZATION ` FOR TAPE & REEL AND OTHER PACKAGING OPTIONS CONTACT SALES OFFICESApplication · HIGH CURRENT, HIGH SPEED SWITCHING · SOLENOID AND RELAY ...
STD16NE06L: Features: ` TYPICAL RDS(on) = 0.07 ` EXCEPTIONAL dv/dt CAPABILITY ` 100% AVALANCHE TESTED ` LOW GATE CHARGE 100 oC ` APPLICATION ORIENTED CHARACTERIZATION ` FOR TAPE & REEL AND OTHER PACKAGING...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
| Symbol | Parameter |
Value |
Unit |
| VDS | Collector-Source Voltage (VGS = 0 V) |
60 |
V |
| VDGR | Drain-gate Voltage (RGS = 20 k) |
60 |
V |
| VGS | Gate-Source Voltage |
±20 |
V |
| ID | Drain Current (continuous) at TC = 25 |
16 |
A |
| ID | Drain Current (continuous) at TC = 100 |
44 |
A |
| IDM (•) | Drain Current (pulsed) |
64 |
A |
| Ptot | Total Dissipation at TC = 25 |
40 |
W |
| Derating Factor |
0.3 |
W/ | |
| dv/dt | Peak Diode Recovery voltage slope |
7 |
V/ns |
| Tstg | Storage Temperature |
-65 to 175 |
|
| Tj | Max. Operating Junction Temperature |
175 |
This Power Mosfet STD16NE06L is the latest development of SGS-THOMSON unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.