STD19NE06L

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Tube
Package / Case : TO-252
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 19 A
Resistance Drain-Source RDS (on) : 0.05 Ohms


Features:

` TYPICAL R<sub>DS(on)</sub> = 0.038
` 100% AVALANCHE TESTED
` LOW GATE CHARGE
` APPLICATIONORIENTED CHARACTERIZATION
` ADD SUFFIX "T4" FORORDERING IN TAPE & REEL


Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· SOLENOID AND RELAY DRIVERS
· MOTOR CONTROL, AUDIO AMPLIFIERS
· DC-DC & DC-AC CONVERTERS


Specifications

Symbol	Parameter	Value	Unit
VDS	Collector-Source Voltage (VGS = 0 V)	60	V
VDGR	Drain-gate Voltage (RGS = 20 k)	60	V
VGS	Gate-Source Voltage	±20	V
ID	Drain Current (continuous) at TC = 25	19	A
ID	Drain Current (continuous) at TC = 100	13	A
IDM(•)	Drain Current (pulsed)	76	A
Ptot	Total Dissipation at TC = 25	45	W
	Derating Factor	0.3	W/
Tstg	Storage Temperature	-65 to 175
Tj	Max. Operating Junction Temperature	175

(•) Pulse width limited by safe operating area


Description

This Power MOSFET STD19NE06L is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.