STD1HNC60T4

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25° C: 2A
Power - Max: 50W
Packaging: Cut Tape (CT)
Manufacturer: STMicroelectronics
Gate Charge (Qg) @ Vgs: 15.5nC @ 10V
Series: PowerMESH™
Rds On (Max) @ Id, Vgs: 5 Ohm @ 1A, 10V
Input Capacitance (Ciss) @ Vds: 228pF @ 25V


Parameters:

Technical/Catalog Information	STD1HNC60T4
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	2A
Rds On (Max) @ Id, Vgs	5 Ohm @ 1A, 10V
Input Capacitance (Ciss) @ Vds	228pF @ 25V
Power - Max	50W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	15.5nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	STD1HNC60T4 STD1HNC60T4 497 2485 2 ND 49724852ND 497-2485-2