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STD20N20

Features: ` TYPICAL RDS(on) = 0.10 ` EXCEPTIONAL dv/dt CAPABILITY` LOW GATE CHARGE` 100% AVALANCHE TESTEDApplication· HIGH CURRENT SWITCHING APPLICATIONS · HIGH EFFICIENCY DC-DC CONVERTERS· PRIMARY SIDE SWITCHSpecifications Symbol Parameter Value Unit TO-220/DPAK TO-220FP VD...

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SeekIC No. : 004507424 Detail

STD20N20: Features: ` TYPICAL RDS(on) = 0.10 ` EXCEPTIONAL dv/dt CAPABILITY` LOW GATE CHARGE` 100% AVALANCHE TESTEDApplication· HIGH CURRENT SWITCHING APPLICATIONS · HIGH EFFICIENCY DC-DC CONVERTERS· PRIMARY ...

STD20N20 Data Sheet

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Part Number:
STD20N20
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

` TYPICAL RDS(on) = 0.10
` EXCEPTIONAL dv/dt CAPABILITY
` LOW GATE CHARGE
` 100% AVALANCHE TESTED


Application

· HIGH CURRENT SWITCHING APPLICATIONS
· HIGH EFFICIENCY DC-DC CONVERTERS
· PRIMARY SIDE SWITCH


Specifications

Symbol Parameter
Value
Unit
TO-220/DPAK
TO-220FP
VDS Collector-Source Voltage (VGS = 0 V)
200
V
VDGR Drain-gate Voltage (RGS = 20 k)

200
V
VGS Gate-Source Voltage
±20
V
ID Drain Current (continuous) at TC = 25
18
A
ID Drain Current (continuous) at TC = 100
11
A
IDM(`) Drain Current (pulsed)
72
A
PTOT Total Dissipation at TC = 25
90
25
W
  Derating Factor
0.72
0.2
W/
dv/dt(1) Peak Diode Recovery voltage slope
15
V/ns
Tj
Tstg		 Operating Junction Temperature
Storage Temperature
-55 to 150
(`) Pulse width limited by safe operating area
(1) ISD 18A, di/dt 400A/s, VDD V(BR)DSS


Description

This STD20N20 MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters.




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