MOSFET REORD 511-STD30NF03L TO-252 N-CH 20A 30V
STD20NE03L: MOSFET REORD 511-STD30NF03L TO-252 N-CH 20A 30V
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
| Gate-Source Breakdown Voltage : | +/- 15 V | Continuous Drain Current : | 20 A | ||
| Resistance Drain-Source RDS (on) : | 0.02 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | TO-252 | Packaging : | Tube |
|
Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-source Voltage (VGS = 0) |
30 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 kW) |
30 |
V |
|
VGE |
Gate-Emitter Voltage |
±15 |
V |
|
ID |
Drain Current (continuous) at TC = 25°C |
20** |
A |
|
ID |
Drain Current (continuous) at TC = 100°C |
20** |
A |
|
IDM () |
Drain Current (pulsed) |
100 |
A |
|
PTOT |
Total Dissipation at TC = 25°C |
50 |
W |
|
|
Derating Factor |
0.33 |
W/°C |
|
dv/dt (1) |
Peak Diode Recovery voltage slope |
7 |
V/ns |
|
Tstg |
Storage Temperature |
- 65 to 175 |
°C |
|
Tj |
Max. Operating Junction Temperature |
175 |
°C |
This STD20NE03L Power MOSFET is the latest development of SGS-THOMSON unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.