STD20NE03L

MOSFET REORD 511-STD30NF03L TO-252 N-CH 20A 30V

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SeekIC No. : 00165772 Detail

STD20NE03L: MOSFET REORD 511-STD30NF03L TO-252 N-CH 20A 30V

floor Price/Ceiling Price

Part Number:
STD20NE03L
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 15 V Continuous Drain Current : 20 A
Resistance Drain-Source RDS (on) : 0.02 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-252 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 30 V
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 15 V
Continuous Drain Current : 20 A
Package / Case : TO-252
Resistance Drain-Source RDS (on) : 0.02 Ohms


Features:

TYPICAL RDS(on) = 0.016 W
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
LOW GATE CHARGE A 100 oC
APPLICATION ORIENTED CHARACTERIZATION



Application

 HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS
 MOTOR CONTROL, AUDIO AMPLIFIERS
 DC-DC & DC-AC CONVERTERS IN HIGH PERFORMANCE VRMs
 AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)



Specifications

Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
30
V

VDGR

Drain- gate Voltage (RGS = 20 kW)

30

V

VGE
Gate-Emitter Voltage
±15
V

ID

Drain Current (continuous) at TC = 25°C

20**

A

ID
Drain Current (continuous) at TC = 100°C
20**

A
IDM ()
Drain Current (pulsed)
100
A
PTOT
Total Dissipation at TC = 25°C
50
W
Derating Factor
0.33
W/°C
dv/dt (1)
Peak Diode Recovery voltage slope
7
V/ns

Tstg

Storage Temperature

- 65 to 175

°C

Tj

Max. Operating Junction Temperature

175

°C




Description

This STD20NE03L Power MOSFET is the latest development of SGS-THOMSON unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




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