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STD20NE06

MOSFET RO 511-STD20NF06 511BCY79IX

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SeekIC No. : 00164537 Detail

STD20NE06: MOSFET RO 511-STD20NF06 511BCY79IX

STD20NE06 Data Sheet

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Part Number:
STD20NE06
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 20 A
Resistance Drain-Source RDS (on) : 0.04 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-252    

Description

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Continuous Drain Current : 20 A
Package / Case : TO-252
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 0.04 Ohms


Features:

 TYPICAL RDS(on) = 0.032 W
 EXCEPTIONAL dv/dt CAPABILITY
 100% AVALANCHE TESTED
 APPLICATION ORIENTED CHARACTERIZATION
 FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE


Application

 SOLENOID AND RELAY DRIVERS
 MOTOR CONTROL, AUDIO AMPLIFIERS
 DC-DC CONVERTERS
 AUTOMOTIVE ENVIRONMENT


Specifications

Symbol
 Parameter
Value
Unit
VDS
 Drain-source Voltage (VGS = 0)
60
V

VDGR

Drain- gate Voltage (RGS = 20 kW)

60

V

VGE
 Gate-Emitter Voltage
± 20
V

ID

Drain Current (continuous) at TC = 25°C

20**

A

ID
Drain Current (continuous) at TC = 100°C
17

A
IDM ()
Drain Current (pulsed)
80
A
PTOT
Total Dissipation at TC = 25°C
50
W
 Derating Factor
0.33
W/°C
dv/dt (1)
Peak Diode Recovery voltage slope
7
V/ns

Tstg

 Storage Temperature

- 65 to 175
°C

Tj

Max. Operating Junction Temperature

175

°C




Description

This STD20NE06 Power MOSFET is the latest development of SGS-THOMSON unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




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