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STD20NF06

Features: `TYPICAL RDS(on) = 0.032 `EXCEPTIONAL dv/dt CAPABILITY`100% AVALANCHE TESTED`APPLICATION ORIENTED CHARACTERIZATIONApplication· HIGH SWITCHING APPLICATIONSSpecifications Symbol Parameter Value Unit VDS Collector-Source Voltage (VGS = 0 V) 60 V VDGR Drain-gate Vol...

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SeekIC No. : 004507425 Detail

STD20NF06: Features: `TYPICAL RDS(on) = 0.032 `EXCEPTIONAL dv/dt CAPABILITY`100% AVALANCHE TESTED`APPLICATION ORIENTED CHARACTERIZATIONApplication· HIGH SWITCHING APPLICATIONSSpecifications Symbol Parame...

STD20NF06 Data Sheet

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Part Number:
STD20NF06
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/18

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Product Details

Description



Features:

 `TYPICAL RDS(on) = 0.032
 `EXCEPTIONAL dv/dt CAPABILITY
 `100% AVALANCHE TESTED
 `APPLICATION ORIENTED CHARACTERIZATION


Application

 · HIGH SWITCHING APPLICATIONS


Specifications

Symbol Parameter
Value
Unit
VDS Collector-Source Voltage (VGS = 0 V)
60
V
VDGR Drain-gate Voltage (RGS = 20 k)

60
V
VGS Gate-Source Voltage
±20
V
ID Drain Current (continuous) at TC = 25 24
A
ID Drain Current (continuous) at TC = 100
17
A
IDM(`) Drain Current (pulsed)
96
A
Ptot Total Dissipation at TC = 25
60
W
  Derating Factor
0.4
W/
dv/dt(1) Peak Diode Recovery voltage slope
10
V/ns
EAS(2) Single Pulse Avalanche Energy
300
mJ
Tstg Storage Temperature
-55 to 175
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area.
(1) ISD 24A, di/dt 100A/s, VDD V(BR)DSS, Tj TJMAX
(2) Starting Tj = 25 , ID =10 A, VDD = 45V


Description

This STD20NF06 Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




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