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STD25NE03L

Features: TYPICAL RDS(on) = 0.019 W100% AVALANCHE TESTEDLOW GATE CHARGEAPPLICATIONORIENTED CHARACTERIZATIONaApplicationHIGH CURRENT, HIGH SPEED SWITCHINGSOLENOID AND RELAY DRIVERSMOTOR CONTROL, AUDIO AMPLIFIERSDC-DC & DC-AC CONVERTERS IN HIGH PERFORMANCE VRMsAUTOMOTIVE ENVIRONMENT(INJECTION, A...

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SeekIC No. : 004507430 Detail

STD25NE03L: Features: TYPICAL RDS(on) = 0.019 W100% AVALANCHE TESTEDLOW GATE CHARGEAPPLICATIONORIENTED CHARACTERIZATIONaApplicationHIGH CURRENT, HIGH SPEED SWITCHINGSOLENOID AND RELAY DRIVERSMOTOR CONTROL, AUDI...

STD25NE03L Data Sheet

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Part Number:
STD25NE03L
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

 TYPICAL RDS(on) = 0.019 W
 100% AVALANCHE TESTED
 LOW GATE CHARGE
 APPLICATIONORIENTED CHARACTERIZATIONa


Application

 HIGH CURRENT, HIGH SPEED SWITCHING
 SOLENOID AND RELAY DRIVERS
 MOTOR CONTROL, AUDIO AMPLIFIERS
 DC-DC & DC-AC CONVERTERS IN HIGH PERFORMANCE VRMs
 AUTOMOTIVE ENVIRONMENT(INJECTION, ABS, AIR-BG, LAMPDRIVERS, Etc.)


Specifications

Symbol
 Parameter
Value
Unit
VDS
 Drain-source Voltage (VGS = 0)
30
V

VDGR

Drain- gate Voltage (RGS = 20 kW)

30

V

VGE
 Gate-Emitter Voltage
± 20
V

ID

Drain Current (continuous) at TC = 25°C

20**

A

ID
Drain Current (continuous) at TC = 100°C
18**

A
IDM ()
Drain Current (pulsed)
100
A
PTOT
Total Dissipation at TC = 25°C
45
W
 Derating Factor
0.3
W/°C

Tstg

 Storage Temperature

- 65 to 175
°C

Tj

Max. Operating Junction Temperature

175

°C




Description

This Power MOSFET STD25NE03L is the latest development of STMicroelectronics unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




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