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STD2NB50-1

Features: ` TYPICAL RDS(on) = 5` 100% AVALANCHE TESTED` VERY LOW INTRINSIC CAPACITANCES ` ADD SUFFIX T4 FOR ORDERING IN TAPE & REELApplication· SWITH MODE POWER SUPPLIES (SMPS)· LIGHTING FOR INDUSTRIAL AND CONSUMER ENVIRONMENTSpecifications Symbol Parameter Value Unit VDS Col...

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SeekIC No. : 004507441 Detail

STD2NB50-1: Features: ` TYPICAL RDS(on) = 5` 100% AVALANCHE TESTED` VERY LOW INTRINSIC CAPACITANCES ` ADD SUFFIX T4 FOR ORDERING IN TAPE & REELApplication· SWITH MODE POWER SUPPLIES (SMPS)· LIGHTING FOR I...

STD2NB50-1 Data Sheet

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Part Number:
STD2NB50-1
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/28

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Product Details

Description



Features:

` TYPICAL RDS(on) = 5
` 100% AVALANCHE TESTED
` VERY LOW INTRINSIC CAPACITANCES
` ADD SUFFIX "T4" FOR ORDERING IN TAPE & REEL


Application

 · SWITH MODE POWER SUPPLIES (SMPS)
 · LIGHTING FOR INDUSTRIAL AND CONSUMER ENVIRONMENT


Specifications

Symbol Parameter
Value
Unit
VDS Collector-Source Voltage (VGS = 0 V)
500
V
VDGR Drain-gate Voltage (RGS = 20 k)

500
V
VGS Gate-Source Voltage
±30
V
ID Drain Current (continuous) at TC = 25
1
A
ID Drain Current (continuous) at TC = 100
0.63
A
IDM (`) Drain Current (pulsed)
4
A
PTOT Total Dissipation at TC = 25
40
W
  Derating Factor
0.32
W/
dv/dt(1) Peak Diode Recovery voltage slope
3.5
V/ns
Tstg Storage Temperature
-65 to 150
Tj Max. Operating Junction Temperature
150
(•)Pulse width limited by safe operating area
(1)ISD1A, di/dt 200A/s, VDD V(BR)DSS, Tj TJMAX.


Description

Using the latest high voltage MESH OVERLAY™ process, STD2NB50-1 STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.




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