Features: ` TYPICAL RDS(on) = 4.1` EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES` 100% AVALANCHE TESTED` VERY LOW GATE INPUT RESISTANCE` GATE CHARGE MINIMIZEDApplication· SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION· WELDING EQUIPMENTSpecifications Sy...
STD2NC70Z-1: Features: ` TYPICAL RDS(on) = 4.1` EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES` 100% AVALANCHE TESTED` VERY LOW GATE INPUT RESISTANCE` GATE CHARGE MINIMIZEDApplication· SINGLE-...
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| Symbol | Parameter |
Value |
Unit |
| VDS | Collector-Source Voltage (VGS = 0 V) |
700 |
V |
| VDGR | Drain-gate Voltage (RGS = 20 k) |
700 |
V |
| VGS | Gate-Source Voltage |
±25 |
V |
| ID | Drain Current (continuous) at TC = 25 |
2.5 |
A |
| ID | Drain Current (continuous) at TC = 100 |
1.45 |
A |
| IDM(`) | Drain Current (pulsed) |
9.2 |
A |
| Ptot | Total Dissipation at TC = 25 |
55 |
W |
| Derating Factor |
0.44 |
W/ | |
| IGS | Gate-source Current (DC) |
±50 |
mA |
| VESD(G-S) | Gate source ESD(HBM-C=100pF, R=1.5K) |
1.5 |
KV |
| dv/dt(1) | Peak Diode Recovery voltage slope |
3 |
V/ns |
| Tstg | Storage Temperature |
-65 to 150 |
|
| Tj | Max. Operating Junction Temperature |
150 |
The STD2NC70Z-1 third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.