Features: ` TYPICAL RDS(on) = 2.8 ` HIGH dv/dt AND AVALANCHE CAPABILITIES` 100% AVALANCHE TESTED ` LOW INPUT CAPACITANCE AND GATE CHARGE` LOW GATE INPUT RESISTANCE` TIGHT PROCESS CONTROL AND HIGH MANUFACTORING YIELDSApplicationThe MDmesh™ family is very suitable for increase the power densi...
STD2NM60-1: Features: ` TYPICAL RDS(on) = 2.8 ` HIGH dv/dt AND AVALANCHE CAPABILITIES` 100% AVALANCHE TESTED ` LOW INPUT CAPACITANCE AND GATE CHARGE` LOW GATE INPUT RESISTANCE` TIGHT PROCESS CONTROL AND HIGH M...
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The MDmesh™ family is very suitable for increase the power density of high voltage converters allowing system miniaturization and higher efficiencies.
| Symbol | Parameter |
Value |
Unit |
| VDS | Collector-Source Voltage (VGS = 0 V) |
600 |
V |
| VDGR | Drain-gate Voltage (RGS = 20 k) |
600 |
V |
| VGS | Gate-Source Voltage |
±30 |
V |
| ID | Drain Current (continuous) at TC = 25 |
2 |
A |
| ID | Drain Current (continuous) at TC = 100 |
1.26 |
A |
| IDM(`) | Drain Current (pulsed) |
8 |
A |
| PTOT | Total Dissipation at TC = 25 |
46 |
W |
| Derating Factor |
0.37 |
W/ | |
| VESD(G-S) | Gate-source ESD(HBM-C=100pF, R=1.5k) |
1 |
kV |
| dv/dt(1) | Peak Diode Recovery voltage slope |
15 |
V/ns |
| Tstg | Storage Temperature |
-65 to 150 |
|
| Tj | Operating Junction Temperature |
150 |
The STD2NM60-1 MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar completition's products.