Features: TYPICAL RDS(on) = 1.3 WEXTREMELY HIGH dv/dt CAPABILITY100% AVALANCHE TESTEDNEW HIGH VOLTAGE BENCHMARKGATE CHARGE MINIMIZEDApplicationHIGH CURRENT, HIGH SPEED SWITCHINGSWITH MODE POWER SUPPLIES(SMPS)DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWERSUPPLIES AND MOTOR DRIVER...
STD4NC50: Features: TYPICAL RDS(on) = 1.3 WEXTREMELY HIGH dv/dt CAPABILITY100% AVALANCHE TESTEDNEW HIGH VOLTAGE BENCHMARKGATE CHARGE MINIMIZEDApplicationHIGH CURRENT, HIGH SPEED SWITCHINGSWITH MODE POWER SUPP...
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|
Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-source Voltage (VGS = 0) |
500 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 kW) |
500 |
V |
|
VGE |
Gate-Emitter Voltage |
± 30 |
V |
|
ID |
Drain Current (continuous) at TC = 25°C (Steady State) |
3.7 |
A |
|
ID |
Drain Current (continuous) at TC = 100°C |
2.3 |
A |
|
IDM () |
Drain Current (pulsed) |
14.8 |
A |
|
PTOT |
Total Dissipation at TC = 25°C (Steady State) |
50 |
W |
|
|
Derating Factor |
0.40 |
W/°C |
|
dv/dt (1) |
Peak Diode Recovery voltage slope |
3 |
V/ns |
|
Tstg |
Storage Temperature |
- 65 to 150 |
°C |
|
Tj |
Max. Operating Junction Temperature |
150 |
°C |
The STD4NC50 PowerMESH]II is the evolution of the first generation of MESH OVERLAY]. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness.