STD4NK60Z-1

MOSFET N-Ch, 600V-1.76ohms Zener SuperMESH 4A

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STD4NK60Z-1 Picture
SeekIC No. : 00159034 Detail

STD4NK60Z-1: MOSFET N-Ch, 600V-1.76ohms Zener SuperMESH 4A

floor Price/Ceiling Price

US $ .36~.37 / Piece | Get Latest Price
Part Number:
STD4NK60Z-1
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~2170
  • 2170~5000
  • Unit Price
  • $.37
  • $.36
  • Processing time
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/5/1

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 4 A
Resistance Drain-Source RDS (on) : 2 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : IPAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Package / Case : IPAK
Continuous Drain Current : 4 A
Resistance Drain-Source RDS (on) : 2 Ohms


Application

HIGH CURRENT, HIGH SPEED SWITCHING
IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
LIGHTING



Specifications

Symbol Parameter Value Unit
    STP4NK60Z
STB4NK60Z
STB4NK60Z-1
STP3NK60ZFP STD4NK60Z
STD4NK60Z-1
 
VDS Drain-source Voltage (VGS =0) 600 V
VDGR Drain-gate Voltage (RGS =20kΩ) 600 V
VGS Gate- source Voltage ± 30 V
ID Drain Current (continuous) at TC = 25°C 4 4 (*) 4 (*) A
ID Drain Current (continuous) at TC =100°C 2.5 2.5 (*) 2.5 (*) A
IDM (· ) Drain Current (pulsed) 16 16 (*) 16 (*) A
PTOT Total Dissipation at TC = 25°C 70 25 70 W
  Derating Factor 0.56 0.2 0.56 W/°C
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ) 3000 V
dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns
VISO Insulation Withstand Voltage (DC)   2500   V
Tj
Tstg
Operating Junction Temperature
Storage Temperature
-55 to 150
-55 to 150
°C



Description

The STD4NK60Z-1 SuperMESH™ series is obtained through an extreme optimization of ST's well established strip-based Power MESH™ layout. In addition to pushing on-resistance significantly down, special care is tak-en to ensure a very good dv/dt capability for the most demanding applications. Such series comple-ments ST full range of high voltage MOSFETs in-cluding revolutionary MDmesh™ products.


Parameters:

Technical/Catalog InformationSTD4NK60Z-1
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C4A
Rds On (Max) @ Id, Vgs2 Ohm @ 2A, 10V
Input Capacitance (Ciss) @ Vds 510pF @ 25V
Power - Max70W
PackagingTube
Gate Charge (Qg) @ Vgs26nC @ 10V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STD4NK60Z 1
STD4NK60Z1



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