MOSFET N-Ch, 600V-1.76ohms Zener SuperMESH 4A
STD4NK60Z-1: MOSFET N-Ch, 600V-1.76ohms Zener SuperMESH 4A
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 600 V | ||
| Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 4 A | ||
| Resistance Drain-Source RDS (on) : | 2 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
| Package / Case : | IPAK | Packaging : | Tube |
| Symbol | Parameter | Value | Unit | ||
| STP4NK60Z STB4NK60Z STB4NK60Z-1 |
STP3NK60ZFP | STD4NK60Z STD4NK60Z-1 |
|||
| VDS | Drain-source Voltage (VGS =0) | 600 | V | ||
| VDGR | Drain-gate Voltage (RGS =20kΩ) | 600 | V | ||
| VGS | Gate- source Voltage | ± 30 | V | ||
| ID | Drain Current (continuous) at TC = 25°C | 4 | 4 (*) | 4 (*) | A |
| ID | Drain Current (continuous) at TC =100°C | 2.5 | 2.5 (*) | 2.5 (*) | A |
| IDM (· ) | Drain Current (pulsed) | 16 | 16 (*) | 16 (*) | A |
| PTOT | Total Dissipation at TC = 25°C | 70 | 25 | 70 | W |
| Derating Factor | 0.56 | 0.2 | 0.56 | W/°C | |
| VESD(G-S) | Gate source ESD(HBM-C=100pF, R=1.5KΩ) | 3000 | V | ||
| dv/dt (1) | Peak Diode Recovery voltage slope | 4.5 | V/ns | ||
| VISO | Insulation Withstand Voltage (DC) | 2500 | V | ||
| Tj Tstg |
Operating Junction Temperature Storage Temperature |
-55 to 150 -55 to 150 |
°C | ||
| Technical/Catalog Information | STD4NK60Z-1 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 4A |
| Rds On (Max) @ Id, Vgs | 2 Ohm @ 2A, 10V |
| Input Capacitance (Ciss) @ Vds | 510pF @ 25V |
| Power - Max | 70W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 26nC @ 10V |
| Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STD4NK60Z 1 STD4NK60Z1 |