STD5NB30

Packaging :
Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Package / Case : DPAK
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 5 A
Drain-Source Breakdown Voltage : 300 V
Resistance Drain-Source RDS (on) : 0.9 Ohms


Features:

 TYPICAL R_DS(on) = 0.75 W
 EXTREMELY HIGH dv/dt CAPABILITY
 100% AVALANCHE TESTED
 VERY LOW INTRINSIC CAPACITANCES
 GATE CHARGE MINIMIZED
 ADD SUFFIX "T4" FORORDERING IN TAPE & REEL


Application

 SWITCH MODE POWER SUPPLIES (SMPS)
 DC-AC CONVERTERS FOR WELDING EQUIPMENT AND
   UNINTERRUPTIBLE POWERSUPPLIES AND MOTOR DRIVE


Specifications

Symbol	Parameter	Value	Unit
VCES	Drain-source Voltage (VGS = 0)	300	V
VDGR	Drain- gate Voltage (RGS = 20 kW)	300	V
VGE	Gate-Emitter Voltage	± 30	V
ID	Drain Current (continuous) at TC = 25°C (Steady State)	5	A
ID	Drain Current (continuous) at TC = 100°C	3	A
IDM ()	Drain Current (pulsed)	20	A
PTOT	Total Dissipation at TC = 25°C (Steady State)	55	W
	Derating Factor	0.44	W/°C
dv/dt (1)	Peak Diode Recovery voltage slope	5.5	V/ns
Tstg	Storage Temperature	- 65 to 150	°C
Tj	Max. Operating Junction Temperature	150	°C

Description

Using the latest high voltage MESH OVERLAY] process, STD5NB30 STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest R_DS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.