STD7NB20

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-252
Continuous Drain Current : 7 A
Resistance Drain-Source RDS (on) : 0.3 Ohms


Features:

` TYPICAL R<sub>DS(on)</sub> = 0.3
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` VERY LOW INTRINSIC CAPACITANCES
` GATE CHARGE MINIMIZED
` ADD SUFFIX "T4" FOR ORDERING IN TAPE & REEL


Application

· SWITH MODE POWER SUPPLIES (SMPS)
· DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT


Specifications

Symbol	Parameter	Value	Unit
VDS	Collector-Source Voltage (VGS = 0 V)	200	V
VDGR	Drain-gate Voltage (RGS = 20 k)	200	V
VGS	Gate-Source Voltage	±20	V
ID	Drain Current (continuous) at TC = 25	7	A
ID	Drain Current (continuous) at TC = 100	5	A
IDM (`)	Drain Current (pulsed)	28	A
PTOT	Total Dissipation at TC = 25	55	W
	Derating Factor	0.44	W/
dv/dt(1)	Peak Diode Recovery voltage slope	5.5	V/ns
Tstg	Storage Temperature	-65 to 150
Tj	Max. Operating Junction Temperature	150

(`) Pulse width limited by safe operating area.
(1) I_SD 7A, di/dt  200A/s, V_DD V_(BR)DSS, T_j  T_JMAX


Description

Using the latest high voltage MESH OVERLAY™ process, STD7NB20 STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprieraty edge termination structure, gives the lowest R_DS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.