ApplicationELECTRONIC BALLASTS FOR FLUORESCENT LIGHTINGSpecifications Symbol Parameter Value Unit VCES Collector-Base Voltage (IBE = 0) -500 V VCEO Collector-Emitter Voltage (IB = 0) -400 V VEBO Emitter-Base Voltage(IC = 0, IB = -0.75 A, tp &...
STD93003: ApplicationELECTRONIC BALLASTS FOR FLUORESCENT LIGHTINGSpecifications Symbol Parameter Value Unit VCES Collector-Base Voltage (IBE = 0) -500 V VCEO Collector-...
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|
Symbol |
Parameter |
Value |
Unit |
|
VCES |
Collector-Base Voltage (IBE = 0) |
-500 |
V |
|
VCEO |
Collector-Emitter Voltage (IB = 0) |
-400 |
V |
|
VEBO |
Emitter-Base Voltage |
V(BR)EBO |
V |
|
IC |
Collector Current |
-1.5 |
A |
|
ICM |
Collector Peak Current (tp < 5 ms) |
-3 |
A |
|
IB |
Base Current |
-0.75 |
A |
|
IBM |
Base Peak Current (tp < 5 ms) |
-1.5 |
A |
|
Ptot |
Total Dissipation at Tc = 25 oC |
20 |
W |
|
Tstg |
Storage Temperature |
-65 to 150 |
|
|
Tj |
Max. Operating Junction Temperature |
150 |
The device STD93003 is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
The STD93003 is expressly designed for a new solution to be used in compact fluorescent lamps, where it is coupled with the STD83003, its complementary NPN transistor.