Position: Home  > All Categories> Integrated Circuits (ICs) > STD95N2LH5

STD95N2LH5

MOSFET N-channel 25V 25V - 0.0037

product image

STD95N2LH5 Picture
See larger image
SeekIC No. : 00156803 Detail

STD95N2LH5: MOSFET N-channel 25V 25V - 0.0037

STD95N2LH5 Data Sheet

floor Price/Ceiling Price

US $ .38~.44 / Piece | Get Latest Price
Part Number:
STD95N2LH5
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1710
  • 1710~2000
  • 2000~2500
  • 2500~5000
  • Unit Price
  • $.44
  • $.4
  • $.4
  • $.38
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/24

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : +/- 22 V Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 0.0045 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : DPAK Packaging : Reel    

Description

Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 25 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : DPAK
Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 0.0045 Ohms
Gate-Source Breakdown Voltage : +/- 22 V


Features:

RDS(on) * Qg industry benchmark
Extremely low on-resistance RDS(on)
High avalanche ruggedness
Low gate drive power losses


Application

Switching applications


Specifications

Symbol
Parameter
Value
Unit
VDS
 Drain-source voltage (VGS=0)
25
V
VGS
 Gate-Source voltage
±20
V
ID (1)
 Drain current (continuous) at TC = 25°C
80
A
ID
 Drain current (continuous) at TC = 100°C
67
A
IDM (2)
 Drain current (pulsed)
320
A
PTOT
 Total dissipation at TC = 25°C
70
W
 Derating factor
0.47
W/°C
EAS (3)
 Single pulse avalanche energy
165
mJ
Tj
Tstg
 Operating junction temperature
Storage temperature
-55 to 175
°C
1. Limited by wire bonding
2. Pulse width limited by safe operating area
3. Starting Tj = 25°C, Id = 40 A, Vdd = 20 V


Description

This product STD95N2LH5  utilizes the 5th generation of design rules of ST's proprietary STripFET™ technology. The lowest available RDS(on)*Qg, in the standard packages, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved.




Parameters:

Technical/Catalog InformationSTD95N2LH5
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs4.5 mOhm @ 40A, 10V
Input Capacitance (Ciss) @ Vds 1817pF @ 25V
Power - Max70W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs13.4nC @ 5V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STD95N2LH5
STD95N2LH5
497 7005 2 ND
49770052ND
497-7005-2



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
RF and RFID
X3C26P1-30S
1P620S
Prototyping Products
AVT4168
DE1
Connectors, Interconnects
ASP-134488-01
WM4078-ND
Optical Inspection Equipment
AA924
A21K4B
Memory Cards, Modules
WT32
VTL5C7
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
View more