Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Mounting Type: Chassis Mount
Packaging: Tube
Supplier Device Package: ISOTOP?
Drain to Source Voltage (Vdss): 900V
Manufacturer: STMicroelectronics
Package / Case: ISOTOP
Power - Max: 450W
Current - Continuous Drain (Id) @ 25° C: 26A
Rds On (Max) @ Id, Vgs: 300 mOhm @ 13A, 10V
Gate Charge (Qg) @ Vgs: 660nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3.75V @ 1mA
Input Capacitance (Ciss) @ Vds: 1770pF @ 25V
Features: TYPICAL RDS(on) = 0.25 W
± 30V GATE TO SOURCE VOLTAGE RATING
100% AVALANCHE TESTED
LOW INTRINSIC CAPACITANCE
GATE CHARGE MINIMIZED
REDUCED VOLTAGE SPREADApplication HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLY (SMPS)
DC-AC CONVERTER FOR WELDING EQUIPMENT AND
UNINTERRUPTABLE POWERSUPPLY AND MOTOR DRIVESpecifications
|
Symbol |
Parameter |
Value |
Unit |
|
VCES |
Drain-source Voltage (VGS = 0) |
900 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 kW) |
900 |
V |
|
VGE |
Gate-Emitter Voltage |
± 30 |
V |
|
ID |
Drain Current (continuous) at Tc = 25 oC |
26 |
A |
|
Id |
Drain Current (continuous) at Tc = 100 oC |
16.4 |
A |
|
ICM(•) |
Collector Current (pulsed) |
104 |
A |
|
Ptot |
Total Dissipation at Tc = 25 oC |
450 |
W |
|
|
Derating Factor |
3.6 |
W/oC |
|
Tstg |
Storage Temperature |
-55 to 150 |
oC |
|
Tj |
Max.Operating Junction Temperature |
150 |
oC |
|
VISO |
Insulation Withhstand Voltage (AC-RMS) |
2500 |
V |
STE26NA90 Data Sheet
