STF21NM50N

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 18 A
Package / Case : TO-220FP
Drain-Source Breakdown Voltage : 500 V
Resistance Drain-Source RDS (on) : 0.19 Ohms
Gate-Source Breakdown Voltage : +/- 25 V


Features:

· 100% AVALANCHE TESTED
· LOW INPUT CAPACITANCE AND GATE CHARGE
· LOW GATE INPUT RESISTANCE




Application

The MDmesh™ II family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.

Specifications

Symbol	Parameter	Value		Unit
		TO-220 / D2PAK / I2PAK / TO-247	TO-220FP
VDS	Drain-source Voltage (VGS = 0)	500		V
VDGR	Drain-gate Voltage (RGS = 20 k)	500		V
VGS	Gate- source Voltage	±25		V
ID	Drain Current (continuos) at TC = 25	18	18(*)	A
ID	Drain Current (continuos) at TC = 100	11	11(*)	A
IDM(`)	Drain Current (pulsed)	72	72(*)	A
PTOT	Total Dissipation at TC = 25	140	30	W
	Derating Factor	1.12	0.23	W/
dv/dt (1)	Peak Diode Recovery voltage slope	15		V/ns
VISO	Insulation Winthstand Voltage (DC)	-	2500	V
Tstg	Storage Temperature	55 to 150 150
Tj	Max. Operating Junction Temperature

(`) Pulse width limited by safe operating area
(*) Limited only by maximum temperature allowed
(1) I_SD 18 A, di/dt 400 A/s, V_DD =80% V_(BR)DSS




Description

The STF21NM50N is a kind of revolutionary MOSFET which associates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

Features of the STF21NM50N are:(1)100% avalanche tested; (2)low input capacitance and gate charge; (3)low gate input resistance.

The absolute maximum ratings of the STF21NM50N can be summarized as:(1): drain-source voltage (VGS = 0)(VDS) is 500 V; (2): drain-gate voltage (RGS = 20 kohms)(VDGR) is 500 V; (3): Gate- source voltage(VGS) is ±25 V; (4): drain current (continuous) at TC = 25(ID) is 18 A; (5): drain current (continuous) at TC = 100(ID) is 11 A; (6): drain current (pulsed)(IDM) is 72 A; (7): total dissipation at TC = 25(PTOT) is 140 W(TO-220 / D2PAK / I2PAK / TO-247) or 30 W(TO-220FP); (8): derating factor is 1.12 W/(TO-220 / D2PAK / I2PAK / TO-247) or 0.23 W/(TO-220FP); (9): peak diode recovery voltage slope(dv/dt) is 15 V/ns; (10): insulation winthstand voltage (DC)(Viso) is 2500 V(TO-220FP); (11): storage temperature(Tstg) is-55 to 150 ; (12): max. operating junction temperature(Tj) is 150.

Parameters:

Technical/Catalog Information	STF21NM50N
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	18A
Rds On (Max) @ Id, Vgs	190 mOhm @ 9A, 10V
Input Capacitance (Ciss) @ Vds	1950pF @ 25V
Power - Max	30W
Packaging	Tube
Gate Charge (Qg) @ Vgs	65nC @ 10V
Package / Case	TO-220-3 Full Pack (Straight Leads)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STF21NM50N STF21NM50N 497 4803 5 ND 49748035ND 497-4803-5