Features: TYPICAL RDS(on) = 2 EXTREMELY HIGH dv/dt CAPABILITYIMPROVED ESD CAPABILITY100% AVALANCHE RATEDGATE CHARGE MINIMIZEDVERY LOW INTRINSIC CAPACITANCESVERY GOOD MANUFACTURING REPEATIBILITYApplicationHIGH CURRENT, HIGH SPEED SWITCHINGIDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFCSpecifica...
STF5NK90Z: Features: TYPICAL RDS(on) = 2 EXTREMELY HIGH dv/dt CAPABILITYIMPROVED ESD CAPABILITY100% AVALANCHE RATEDGATE CHARGE MINIMIZEDVERY LOW INTRINSIC CAPACITANCESVERY GOOD MANUFACTURING REPEATIBILITYAppli...
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|
Symbol |
Parameter |
Value |
Unit | |
|
STP5NK90Z |
STF5NK90Z | |||
|
VDS |
Drain-source Voltage (VGS = 0) |
900 |
V | |
|
VDGR |
Drain-gate Voltage (RGS = 20 kW) |
900 |
V | |
|
VGS |
Gate- source Voltage |
±30 |
V | |
|
ID |
Drain Current (continuos) at TC = 25°C |
4.5 |
4.5 (*) |
A |
|
ID |
Drain Current (continuos) at TC = 100°C |
2.8 |
2.8 (*) |
A |
|
IDM () |
Drain Current (pulsed) |
18 |
18 (*) |
A |
|
PTOT |
Total Dissipation at TC = 25°C |
125 |
30 |
W |
| Derating Factor |
1 |
0.24 |
W/°C | |
| VESD(G-S) | Gate source ESD(HBM-C=100pF, R=1.5K) |
4000 |
V | |
|
dv/dt (1) |
Peak Diode Recovery voltage slope |
4.5 |
V/ns | |
|
VISO |
Insulation Withstand Voltage (DC) |
- |
2500 |
V |
|
Tj Tstg |
Operating Junction Temperature Storage Temperature |
-55 to 150 -55 to 150 |
°C
°C | |
The STF5NK90Z SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.