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STF6NM60N

MOSFET Power MOSFET Power MDmesh

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SeekIC No. : 00159841 Detail

STF6NM60N: MOSFET Power MOSFET Power MDmesh

STF6NM60N Data Sheet

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Part Number:
STF6NM60N
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : 4.6 A
Resistance Drain-Source RDS (on) : 0.92 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220FP Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220FP
Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 25 V
Continuous Drain Current : 4.6 A
Resistance Drain-Source RDS (on) : 0.92 Ohms


Features:

· 100% avalanche tested
· Low input capacitance and gate charge
· Low gate input resistance


Application

· Switching applications


Specifications

Symbol
 Parameter
Value
Unit
TO-220
DPAK/IPAK
TO-220FP
VDS
 Drain-source voltage (VGS=0)
600
V
VGS
 Gate-source voltage
± 25
V
ID
 Drain current (continuous) at TC = 25
4.6
4.6(1)
A
ID
 Drain current (continuous) at TC = 100
2.9
2.9(1)
A
IDM(2)
 Drain current (pulsed)
18.4
18.4(1)
A
PTOT
 Total dissipation at TC = 25
45
20
A
dv/dt (3)
 Peak diode recovery voltage slope
15
V/ns
VISO
 Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s;TC=25)
--
2500
V
Tj,Tstg
Operating junction temperature Storage temperature
-55 to 150
1. Limited by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD 4.6A, di/dt 400A/s, VDD = 80% V(BR)DSS


Description

This device STF6NM60N is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.




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