STF60N55F3

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 42 A
Package / Case : TO-220FP
Drain-Source Breakdown Voltage : 55 V
Resistance Drain-Source RDS (on) : 0.0085 Ohms


Features:

Type	VDSS	RDS(on)	ID	Pw
STB60N55F3 STD60N55F3 STF60N55F3 STP60N55F3 STU60N55F3	55V 55V 55V 55V 55V	<8.5m <8.5m <8.5m <8.5m <8.5m	80A 80A 42A 80A 80A	110W 110W 30W 110W 110W

` Standard threshold drive
` 100% avalanche tested


Application

· Switching application


Description

This STF60N55F3 n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics' unique "Single Feature Size™" strip-based process, which has decreased the critical alignment steps, offering remarkable manufacturing reproducibility. The outcome is a transistor with extremely high packing density for low onresistance, rugged avalanche characteristics and low gate charge.