Features: TYPICALRDS(on)=0.93ΩEXTREMELYHIGHdv/dtCAPABILITY100%AVALANCHETESTEDGATECHARGEMINIMIZEDVERYLOWINTRINSICCAPACITANCESVERYGOODMANUFACTURING REPEATIBILITYApplicationHIGH CURRENT,HIGH SPEED SWITCHINGIDEAL FOR OFF-LINE POWER SUPPLIES,ADAPTORS AND PFCLIGHTINGSpecifications Symbol P...
STF6NK50Z: Features: TYPICALRDS(on)=0.93ΩEXTREMELYHIGHdv/dtCAPABILITY100%AVALANCHETESTEDGATECHARGEMINIMIZEDVERYLOWINTRINSICCAPACITANCESVERYGOODMANUFACTURING REPEATIBILITYApplicationHIGH CURRENT,HIGH SPEE...
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| Symbol | Parameter | Value | Unit | |
| STP6NK50Z STD6NK50Z |
STF6NK50Z | |||
| VDS | Drain-sourceVoltage(VGS=0) | 500 | V | |
| VDGR | Drain-gateVoltage(RGS=20kΩ) | 500 | V | |
| VGS | Gate-sourceVoltage | ±30 | V | |
| ID | DrainCurrent(continuous)at TC=25°C | 5.6 | 5.6(*) | A |
| ID | DrainCurrent(continuous)at TC=100°C | 3.5 | 3.5(*) | A |
| IDM | DrainCurrent(pulsed)22.422.4(*)A | 22.4 | 22.4(*) | A |
| PTOT | TotalDissipationat TC=25°C | |||
| DeratingFactor | 0.72 | 0.2 | W | |
| VESD(G-S) | GatesourceESD(HBM-C=100pF,R=1.5KΩ) | 3000 | W/°C | |
| dv/dt(1) | PeakDiodeRecoveryvoltageslope | 4.5 | V/ns | |
| VISO | InsulationWithstandVoltage(DC) | - | 2500 | V |
| Tj Tstg |
OperatingJunctionTemperature StorageTemperature |
-55to150 | °C | |
The STF6NK50Z SuperMESH™ series is obtained through an extreme optimization of ST's well established strip-based Power MESH™ layout.In addition to pushing on-resistance significantly down,special care is tak-en to ensure a very good dv/dt capability for the most demanding applications.Such series comple ments ST full range of high voltage MOSFETs in-cluding revolutionary MDmesh™products.