Features: S uper high dense cell design for low R DS (ON). R ugged and reliable. S urface Mount P ackage.Specifications Parameter Symbol Limit Unit Drain-S ource Voltage VDS 20 V Gate-S ource Voltage VGS 10 V Drain Current-Continuousa @ TC=25 -Pul...
STG8203: Features: S uper high dense cell design for low R DS (ON). R ugged and reliable. S urface Mount P ackage.Specifications Parameter Symbol Limit Unit Drain-S ource Voltage V...
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|
Parameter |
Symbol |
Limit |
Unit |
| Drain-S ource Voltage |
VDS |
20 |
V |
| Gate-S ource Voltage |
VGS |
10 |
V |
| Drain Current-Continuousa @ TC=25 -Pulsedb |
ID |
5 |
A |
|
IDM |
25 |
A | |
| Drain-S ource Diode Forward Currenta |
IS |
2 |
A |
| Maximum Power Dissipationa |
PD |
1.5 |
W |
| Operating Junction and S torage Temperature R ange |
TJ , TSTG |
-55 to 150 |
C |