Features: · LOWER ON-VOLTAGE DROP (Vcesat)· OFF LOSSES INCLUDE TAIL CURRENT· LOWER CRES / CIES RATIO· SWITCHING LOSSES INCLUDE DIODE RECOVERY ENERGY· VERY SOFT ULTRA FAST RECOVERY ANTIPARALLEL DIODE· NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER DISTRUBUTIONApplication·HIGH FREQUENCY MOTOR CONTRO...
STGB10NC60KD: Features: · LOWER ON-VOLTAGE DROP (Vcesat)· OFF LOSSES INCLUDE TAIL CURRENT· LOWER CRES / CIES RATIO· SWITCHING LOSSES INCLUDE DIODE RECOVERY ENERGY· VERY SOFT ULTRA FAST RECOVERY ANTIPARALLEL DIODE...
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ApplicationELECTRONIC IGNITIONLIGHT DIMMERSTATIC RELAYSSpecifications Symbol Parameter ...
| Symbol | Parameter | Value | Unit | |
| STGB10NC60KD STGP10NC60KD |
STGF10NC60KD | |||
| VCES | Collector-Emitter Voltage (VGS = 0) | 600 | V | |
| VECR | Emitter-Collector Voltage | 200 | V | |
| VGE | Gate-Emitter Voltage | ±20 | V | |
| IC | Collector Current (continuous) at TC = 25°C (#) | 20 | 9 | A |
| IC | Collector Current (continuous) at TC = 100°C (#) | 10 | 6 | A |
| ICM (`) | Collector Current (pulsed) | 40 | A | |
| IF | Diode RMS Forward Current at TC = 25°C | 10 | A | |
| PTOT | Total Dissipation at TC = 25°C | 60 | 25 | W |
| Derating Factor | 0.48 | 0.20 | W/°C | |
| VISO | Insulation Withstand Voltage A.C.(t = 1 sec; Tc = 25°C) | - | 2500 | V |
| Tstg | Storage Temperature | 55 to 150 | °C | |
| Tj | Operating Junction Temperature | |||
Using the latest high voltage technology based on a patented strip layout, STGB10NC60KD STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH ™ IGBTs, with outstanding performances. The suffix "K" identifies a family optimized for high frequency motor control applications with short circuit withstand capability.