IGBT Transistors N-channel MOSFET
STGB10NC60KDT4: IGBT Transistors N-channel MOSFET
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ApplicationELECTRONIC IGNITIONLIGHT DIMMERSTATIC RELAYSSpecifications Symbol Parameter ...
| Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V | ||
| Maximum Gate Emitter Voltage : | +/- 20 V | Maximum Operating Temperature : | + 150 C | ||
| Package / Case : | D2PAK-3 | Packaging : | Reel |
| Technical/Catalog Information | STGB10NC60KDT4 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 20A |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 5A |
| Power - Max | 60W |
| Mounting Type | Surface Mount |
| Package / Case | D²Pak, TO-263 (2 leads + tab) |
| Packaging | Tape & Reel (TR) |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STGB10NC60KDT4 STGB10NC60KDT4 497 5736 2 ND 49757362ND 497-5736-2 |