ApplicationHIGH FREQUENCY MOTOR CONTROLSSMPSUPSSpecifications Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VGS = 0) 600 V VECR Emitter-Collector Voltage 20 V VGE Gate-Emitter Voltage ± 20 V IC Collector Current (continuou...
STGB12NB60KD: ApplicationHIGH FREQUENCY MOTOR CONTROLSSMPSUPSSpecifications Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VGS = 0) 600 V VECR Emitter-Collector Vol...
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ApplicationELECTRONIC IGNITIONLIGHT DIMMERSTATIC RELAYSSpecifications Symbol Parameter ...
|
Symbol |
Parameter |
Value |
Unit |
|
VCES |
Collector-Emitter Voltage (VGS = 0) |
600 |
V |
|
VECR |
Emitter-Collector Voltage |
20 |
V |
|
VGE |
Gate-Emitter Voltage |
± 20 |
V |
|
IC |
Collector Current (continuous) at Tc = 25 oC |
30 |
A |
|
IC |
Collector Current (continuous) at Tc = 100 oC |
18 |
A |
|
ICM(•) |
Collector Current (pulsed) |
60 |
A |
|
Tsc |
Short Circuit Withstand |
10 |
ms |
|
Ptot |
Total Dissipation at Tc = 25 oC |
125 |
W |
| Derating Factor |
1.0 |
W/oC | |
|
Tstg |
Storage Temperature |
65 to 150 |
oC |
|
Tj |
Operating Junction Temperature |
150 |
oC |
Using the latest high voltage technology based on a patented strip layout, STGB12NB60KD STMicroelectronics has designed an advanced family of IGBTs, the Power- MESH™ IGBTs, with outstanding performances. The suffix "K" identifies a family optimized for high frequency applications (up to 50kHz) and short circuit proof in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.