Features: · Low on-voltage drop (VCE(sat))· Low CRES / CIES ratio (no cross-conduction susceptibility)· Very soft ultra fast recovery anti-parallel diodeApplication· High frequency motor controls· SMPS and PFC in both hard switch and resonant topologies· Motor drivesSpecifications Symbol ...
STGB19NC60HD: Features: · Low on-voltage drop (VCE(sat))· Low CRES / CIES ratio (no cross-conduction susceptibility)· Very soft ultra fast recovery anti-parallel diodeApplication· High frequency motor controls· S...
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ApplicationELECTRONIC IGNITIONLIGHT DIMMERSTATIC RELAYSSpecifications Symbol Parameter ...
|
Symbol |
Parameter |
Value |
Unit | ||
|
TO-220 D²PAK |
TO-220FP |
TO-247 | |||
|
VCES |
Collector-emitter voltage (VGE = 0) |
600 |
V | ||
|
IC(1) |
Collector current (continuous) at TC = 25 |
40 |
16 |
42 |
A |
|
IC(1) |
Collector current (continuous) at TC = 100 |
19 |
10 |
21 |
A |
|
ICL(2) |
Turn-off latching current |
40 |
A | ||
|
ICP(3) |
Pulsed collector current |
40 |
A | ||
|
IF |
Diode RMS forward current at TC = 25 |
20 |
A | ||
|
IFSM |
Surge not repetitive forward current tp=10 ms sinusoidal |
50 |
A | ||
|
VGE |
TGate-emitter voltage |
±20 |
V | ||
|
PTOT |
Total dissipation at TC = 25 |
130 |
32 |
140 |
W |
|
Tj |
Operating junction temperature |
55 to 150 |
|||
This STGB19NC60HD IGBT utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.