STGB19NC60K

Features: Low on-voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross conduction susceptibility) Short circuit withstand time 10 s IGBT co-packaged with ultra fast free-wheeling diodeApplication High frequency inverters Motor driversSpecifications Symbol Parameter Value Unit VCES C...

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STGB19NC60K Picture
SeekIC No. : 004507634 Detail

STGB19NC60K: Features: Low on-voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross conduction susceptibility) Short circuit withstand time 10 s IGBT co-packaged with ultra fast free-wheeling diodeApplication...

floor Price/Ceiling Price

Part Number:
STGB19NC60K
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Features:

Low on-voltage drop (VCE(sat))
Low Cres / Cies ratio (no cross conduction susceptibility)
Short circuit withstand time 10 s
IGBT co-packaged with ultra fast free-wheeling diode



Application

High frequency inverters
Motor drivers



Specifications

Symbol Parameter Value Unit
VCES Collector-emitter voltage (VGE = 0) 600 V
IC (1) Collector current (continuous) at TC = 25 35 A
IC (1) Collector current (continuous) at TC = 100 20 A
ICL (2) Turn-off latching current 75 A
ICP (3) Pulsed collector current 75 A
VGE Gate-emitter voltage ±20 V
PTOT Total dissipation at TC = 25 125 W
tscw Short circuit withstand time, VCE = 0.5 V(BR)CES
Tj = 125 , RG = 10 , VGE = 12 V
10 s
Tj Operating junction temperature 55 to 150
1. Calculated according to the iterative formula:
2. Vclamp = 80%,(VCES), Tj =150°C, RG = 10 , VGE = 15 V
3. Pulse width limited by max. junction temperature allowed



Description

This STGB19NC60K IGBT utilizes the advanced PowerMESH™process resulting in an excellent trade-off between switching performance and low on-state behavior.




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