Features: Low on-voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross conduction susceptibility) Short circuit withstand time 10 s IGBT co-packaged with ultra fast free-wheeling diodeApplication High frequency inverters Motor driversSpecifications Symbol Parameter Value Unit VCES C...
STGB19NC60K: Features: Low on-voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross conduction susceptibility) Short circuit withstand time 10 s IGBT co-packaged with ultra fast free-wheeling diodeApplication...
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ApplicationELECTRONIC IGNITIONLIGHT DIMMERSTATIC RELAYSSpecifications Symbol Parameter ...
| Symbol | Parameter | Value | Unit |
| VCES | Collector-emitter voltage (VGE = 0) | 600 | V |
| IC (1) | Collector current (continuous) at TC = 25 | 35 | A |
| IC (1) | Collector current (continuous) at TC = 100 | 20 | A |
| ICL (2) | Turn-off latching current | 75 | A |
| ICP (3) | Pulsed collector current | 75 | A |
| VGE | Gate-emitter voltage | ±20 | V |
| PTOT | Total dissipation at TC = 25 | 125 | W |
| tscw | Short circuit withstand time, VCE = 0.5 V(BR)CES Tj = 125 , RG = 10 , VGE = 12 V |
10 | s |
| Tj | Operating junction temperature | 55 to 150 |
This STGB19NC60K IGBT utilizes the advanced PowerMESH™process resulting in an excellent trade-off between switching performance and low on-state behavior.