STGB20NB32LZ-1

Features: POLYSILICON GATE VOLTAGE DRIVENLOW THRESHOLD VOLTAGELOW ON-VOLTAGE DROPHIGH CURRENT CAPABILITYHIGH VOLTAGE CLAMPING FEATURESURFACE-MOUNTING D²PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX T4 )ApplicationAUTOMOTIVE IGNITIONSpecifications Symbol...

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SeekIC No. : 004507635 Detail

STGB20NB32LZ-1: Features: POLYSILICON GATE VOLTAGE DRIVENLOW THRESHOLD VOLTAGELOW ON-VOLTAGE DROPHIGH CURRENT CAPABILITYHIGH VOLTAGE CLAMPING FEATURESURFACE-MOUNTING D²PAK (TO-263) POWER PACKAGE IN TUBE (NO S...

floor Price/Ceiling Price

Part Number:
STGB20NB32LZ-1
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Features:

 POLYSILICON GATE VOLTAGE DRIVEN
 LOW THRESHOLD VOLTAGE
 LOW ON-VOLTAGE DROP
 HIGH CURRENT CAPABILITY
 HIGH VOLTAGE CLAMPING FEATURE
 SURFACE-MOUNTING D²PAK (TO-263) POWER PACKAGE IN
   TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX "T4")



Application

AUTOMOTIVE IGNITION


Specifications

Symbol
Parameter
Value
Unit
VCES
Collector-Emitter Voltage (VGS = 0)
CLAMPED
V

VECR

Emitter-Collector Voltage

20

V

VGE
Gate-Emitter Voltage
CLAMPED
V
IC
Collector Current (continuous) at Tc = 25 oC
40
A
IC
Collector Current (continuous) at Tc = 100 oC
30
A
ICM(•)
Collector Current (pulsed)
80
A

Eas

Single Pulse Energy Tc = 25°C

700

mJ

Ptot
Total Dissipation at Tc = 25 oC
150
W
Derating Factor
1
W/oC

ESD

ESD (Human Body Model)

4

KV

Tstg
Storage Temperature
65 to 175
oC
Tj
Max.Operating Junction Temperature

 175

oC



Description

Using the latest high voltage technology based on a patented strip layout, STGB20NB32LZ-1 STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection.




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