Features: POLYSILICON GATE VOLTAGE DRIVENLOW THRESHOLD VOLTAGELOW ON-VOLTAGE DROPHIGH CURRENT CAPABILITYHIGH VOLTAGE CLAMPING FEATURESURFACE-MOUNTING D²PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX T4 )ApplicationAUTOMOTIVE IGNITIONSpecifications Symbol...
STGB20NB32LZ-1: Features: POLYSILICON GATE VOLTAGE DRIVENLOW THRESHOLD VOLTAGELOW ON-VOLTAGE DROPHIGH CURRENT CAPABILITYHIGH VOLTAGE CLAMPING FEATURESURFACE-MOUNTING D²PAK (TO-263) POWER PACKAGE IN TUBE (NO S...
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ApplicationELECTRONIC IGNITIONLIGHT DIMMERSTATIC RELAYSSpecifications Symbol Parameter ...
|
Symbol |
Parameter |
Value |
Unit | |
|
VCES |
Collector-Emitter Voltage (VGS = 0) |
CLAMPED |
V | |
|
VECR |
Emitter-Collector Voltage |
20 |
V | |
|
VGE |
Gate-Emitter Voltage |
CLAMPED |
V | |
|
IC |
Collector Current (continuous) at Tc = 25 oC |
40 |
A | |
|
IC |
Collector Current (continuous) at Tc = 100 oC |
30 |
A | |
|
ICM(•) |
Collector Current (pulsed) |
80 |
A | |
|
Eas |
Single Pulse Energy Tc = 25°C |
700 |
mJ | |
|
Ptot |
Total Dissipation at Tc = 25 oC |
150 |
W | |
| Derating Factor |
1 |
W/oC | ||
|
ESD |
ESD (Human Body Model) |
4 |
KV | |
|
Tstg |
Storage Temperature |
65 to 175 |
oC
| |
|
Tj |
Max.Operating Junction Temperature |
175 |
oC | |
Using the latest high voltage technology based on a patented strip layout, STGB20NB32LZ-1 STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection.