STGB20NB32LZ

IGBT N-CH CLAMP 2V 20A I2PAK

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SeekIC No. : 003434227 Detail

STGB20NB32LZ: IGBT N-CH CLAMP 2V 20A I2PAK

floor Price/Ceiling Price

US $ 1~2.18 / Piece | Get Latest Price
Part Number:
STGB20NB32LZ
Mfg:
Supply Ability:
5000

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Upload time: 2025/12/23

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Product Details

Quick Details

Series: PowerMESH™ Manufacturer: STMicroelectronics
Frequency : 0.5 GHz to 2 GHz IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 375V Vce(on) (Max) @ Vge, Ic: 2V @ 4.5V, 20A
Current - Collector (Ic) (Max): 40A Power - Max: 150W
Input Type: Logic Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK    

Description

IGBT Type: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Packaging: Tube
Current - Collector (Ic) (Max): 40A
Input Type: Logic
Power - Max: 150W
Series: PowerMESH™
Manufacturer: STMicroelectronics
Vce(on) (Max) @ Vge, Ic: 2V @ 4.5V, 20A
Voltage - Collector Emitter Breakdown (Max): 375V


Features:

 POLYSILICON GATE VOLTAGE DRIVEN
 LOW THRESHOLD VOLTAGE
 LOW ON-VOLTAGE DROP
 HIGH CURRENT CAPABILITY
 HIGH VOLTAGE CLAMPING FEATURE
 SURFACE-MOUNTING D²PAK (TO-263) POWER PACKAGE IN
   TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX "T4")



Application

AUTOMOTIVE IGNITION


Specifications

Symbol
Parameter
Value
Unit
VCES
Collector-Emitter Voltage (VGS = 0)
CLAMPED
V

VECR

Emitter-Collector Voltage

20

V

VGE
Gate-Emitter Voltage
CLAMPED
V
IC
Collector Current (continuous) at Tc = 25 oC
40
A
IC
Collector Current (continuous) at Tc = 100 oC
30
A
ICM(•)
Collector Current (pulsed)
80
A

Eas

Single Pulse Energy Tc = 25°C

700

mJ

Ptot
Total Dissipation at Tc = 25 oC
150
W
Derating Factor
1
W/oC

ESD

ESD (Human Body Model)

4

KV

Tstg
Storage Temperature
65 to 175
oC
Tj
Max.Operating Junction Temperature

 175

oC



Description

Using the latest high voltage technology based on a patented strip layout, STGB20NB32LZ STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection.




Parameters:

Technical/Catalog InformationSTGB20NB32LZ
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Input TypeLogic
Voltage - Collector Emitter Breakdown (Max)375V
Current - Collector (Ic) (Max)40A
Vce(on) (Max) @ Vge, Ic2V @ 4.5V, 20A
Power - Max150W
Mounting TypeThrough Hole
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
PackagingTube
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names STGB20NB32LZ
STGB20NB32LZ
497 3522 5 ND
49735225ND
497-3522-5



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