STGB20NB37LZ

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Package / Case : D2PAK-3
Maximum Gate Emitter Voltage : 12 V
Collector- Emitter Voltage VCEO Max : 375 V


Features:

POLYSILICONGATE VOLTAGE DRIVEN
LOW THRESHOLD VOLTAGE
LOW ON-VOLTAGEDROP
HIGH CURRENT CAPABILITY
HIGH VOLTAGE CLAMPING FEATURE
SURFACE-MOUNTING D2PAK (TO-263) POWERPACKAGE IN
   TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX "T4")

Application

 AUTOMOTIVE IGNITION


Specifications

Symbol	Parameter	Value		Unit
VCES	Collector-Emitter Voltage (VGS = 0)	CLAMPED		V
VECR	Emitter-Collector Voltage	20		V
VGE	Gate-Emitter Voltage	CLAMPED		V
IC	Collector Current (continuous) at Tc = 25 oC	40		A
IC	Collector Current (continuous) at Tc = 100 oC	30		A
ICM(•)	Collector Current (pulsed)	80		A
EAS	Single Pulse Energy Tc = 25 oC	700		mJ
Ptot	Total Dissipation at Tc = 25 oC	150		W
	Derating Factor	1		W/oC
ESD	ESD (Human Body Model)	4		KV
Tstg	Storage Temperature	65 to175		oC
Tj	Max.Operating Junction Temperature	175		oC

Description

Using the latest high voltage technology based on patented strip layout, STMicroelectronics has designed an advanced family of IGBTs with outstandingperformances.

The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection.

Parameters:

Technical/Catalog Information	STGB20NB37LZ
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Input Type	Logic
Voltage - Collector Emitter Breakdown (Max)	425V
Current - Collector (Ic) (Max)	40A
Vce(on) (Max) @ Vge, Ic	2V @ 4.5V, 20A
Power - Max	200W
Mounting Type	Surface Mount
Package / Case	D²Pak, TO-263 (2 leads + tab)
Packaging	Tape & Reel (TR)
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STGB20NB37LZ STGB20NB37LZ