Features: POLYSILICON GATE VOLTAGE DRIVENLOW THRESHOLD VOLTAGELOW ON-VOLTAGE DROPLOW GATE CHARGEHIGH CURRENT CAPABILITYHIGH VOLTAGE CLAMPING FEATUREApplicationAUTOMOTIVE IGNITIONSpecifications Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VGS = 0) CLAMPED ...
STGB20NB41LZ: Features: POLYSILICON GATE VOLTAGE DRIVENLOW THRESHOLD VOLTAGELOW ON-VOLTAGE DROPLOW GATE CHARGEHIGH CURRENT CAPABILITYHIGH VOLTAGE CLAMPING FEATUREApplicationAUTOMOTIVE IGNITIONSpecifications ...
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ApplicationELECTRONIC IGNITIONLIGHT DIMMERSTATIC RELAYSSpecifications Symbol Parameter ...
|
Symbol |
Parameter |
Value |
Unit | |
|
VCES |
Collector-Emitter Voltage (VGS = 0) |
CLAMPED |
V | |
|
VECR |
Emitter-Collector Voltage |
20 |
V | |
|
VGE |
Gate-Emitter Voltage |
CLAMPED |
V | |
|
IC |
Collector Current (continuous) at Tc = 25 oC |
40 |
A | |
|
IC |
Collector Current (continuous) at Tc = 100 oC |
20 |
A | |
|
ICM(•) |
Collector Current (pulsed) |
80 |
A | |
|
Eas |
Single Pulse Energy Tc = 25°C |
700 |
mJ | |
|
Ptot |
Total Dissipation at Tc = 25 oC |
200 |
W | |
| Derating Factor |
1.33 |
W/oC | ||
|
ESD |
ESD (Human Body Model) |
8 |
KV | |
|
Tstg |
Storage Temperature |
55 to 175 |
oC
| |
|
Tj |
Operating Junction Temperature | |||
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection.